Exawatt’s research includes a comprehensive understanding of SiC crystal growth, epitaxial deposition and front-end device manufacturing processes and cost
We have developed cost models for all aspects of SiC supply chain, including capital expenditure (capex) and depreciation, energy costs, consumables cost, operating costs, cycle times and equipment productivity and yield.
Our cost models cover the following:
- SiC crystal growth, wafering and epitaxy – Exawatt has developed detailed cost models and forecasts for SiC crystal growth, wafering cost, and epitaxial growth. This includes competing crystal growth technologies, 200mm wafers and alternative wafering technologies. We use our models to create forecasts for wafer price and later steps in the supply chain.
- Device fabrication – Exawatt’s device fabrication cost models, including front- and back-end production, are based primarily on extensive conversations with, and on information shared by, multiple industry stakeholders. These models feed into our device and module price forecast, which informs our market forecasts.
- System integration – Exawatt is developing detailed system-level cost models, from EV converter costs (inverter, on-board charger and charging station) through to battery costs and vehicle integration costs. This enables Exawatt to develop a full system-level cost-benefit analysis for SiC
Meet the power electronics team
Adam Dawson
Head of Power ElectronicsAdam Dawson
Adam is responsible for Exawatt’s silicon carbide and power electronics analysis. He has an MSci in Mathematics from the University of Bristol. Adam has applied his interest in mathematical modelling and physics to power semiconductors and power electronics systems.
