Exawatt has been tracking silicon carbide (SiC) device prices, availability, and specifications on the open market since July 2019
Price analysis includes adjustments for margins and high-volume discounts that we believe are likely to be obtained by major manufacturers.
Exawatt has developed models for on-resistance (Rdson) and current density with industry and academic partners, based on roadmaps that contemplate evolving SiC device performance. Our models consider factors such as device/module heat dissipation limitations and future substrate costs as a driver for device size reductions.
Additional analysis of SiC device technology development, performance and specifications is provided through our partnership with Dr Peter Gammon of PGC Consultancy. Peter is also Professor of Power Electronic Devices at the University of Warwick
Meet the power electronics team
Adam Dawson
Senior Research Analyst (Power electronics)Adam Dawson
Adam is responsible for Exawatt’s silicon carbide and power electronics analysis. He has an MSci in Mathematics from the University of Bristol. Adam has applied his interest in mathematical modelling and physics to power semiconductors and power electronics systems.
